Memory ICs

Winboard DRAM product portfolio consists of specialty DRAM that is focused on low- and middle-density characteristics of high-performance and high-speed applications. The products are widely used by leaders in the consumer, communication, computer peripheral, industrial and automotive markets. Winbond provides support for industrial and automotive applications with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates.

Winbond developed mobile DRAM devices with a low IDD current value, which helps the company extend its mobile DRAM memory applications beyond the mobile phone and tablet markets to areas of mobile consumer electronics and mobile communication. Winbond mobile DRAM devices support both x16 and x32 data widths.

Mobile DRAM IC memory products include:

• PSRAM IC: (32Mb, 64Mb, 128Mb, 256Mb) 65/46 nm process
• HyperRAM IC: (32Mb, 64Mb, 128Mb, 256Mb, 512Mb) 38nm process
• LP DDR1 IC: (128Mb, 256Mb, 512Mb, 1Gb) 65/46nm process
• LP DDR2 IC: (256Mb, 512Mb, 1Gb, 2Gb) 46/38/25nm process
• LP DDR3 IC: (1Gb, 4Gb) 38/25nm process 2Gb MP Q1/2021
• LP DDR4 IC: (2Gb, 4Gb) 25nm process 8Gb MP Q2/2021

Synchronous DRAM is designed to process data at the same clock speed as the CPU, making it the core component used in high-speed processing of large volumes of data. Currently, usage of synchronous DRAM is expanding to various consumer electronics such as automotive, industrial, networking,  DTV, DSC and STB.

SDRAM IC memory products include:

• (16Mb, 32Mb, 64Mb, 128Mb, 256Mb) 65nm/46nm process

Pseudo SRAM (Static Random Access Memory) consists of a DRAM macro core with a traditional SRAM interface, an on-chip refresh circuit that frees the user from the need to take care of this task. Compared to traditional CMOS SRAM, PSRAM offers higher density, higher speed, smaller die size and a DRAM-compatible process.

PSRAM IC memory products include:

• (32Mb, 64Mb, 128Mb, 256Mb) 65/46nm process

The W25X family supports Dual-SPI, effectively doubling standard SPI clock rates. The W25Q family is a “superset” of the 25X family with Dual-I/O and Quad-I/O SPI for even higher performance. Clock rates up to 104MHz achieve an equivalent of 416MHz (50M-Byte/S transfer rate) when using Quad-SPI. This is more than four times the performance of ordinary Serial Flash (50MHz) and surpasses asynchronous Parallel Flash memory while using fewer pins and less space.

Serial NOR flash IC products include:

• (512Kb, 1Mb, 2Mb, 4Mb, 8Mb, 16Mb, 32Mb, 64Mb, 128Mb, 256Mb, 512Mb, 1Gb, 2Gb) 1.2V, 1.8V, 2.5V, 3V 90/58nm process

Winbond offers a family of industry-standard SLC NAND Flash memory to service the lower-density code storage SLC NAND segment in the 1Gb to 8Gb density range. SLC NAND Flash products are direct drop-in replacements to the equivalent products in the industry from different suppliers, and the products are fully compatible. The command set, the interface and the packages are the same as what other suppliers provide.

SLC NAND Flash IC products include:

• (1Gb, 2Gb, 4Gb, 8Gb) 1.8V, 3V 46/32nm process

Winbond’s OctalNAND Flash enables automotive and industrial manufacturers to provide code storage in high density without having to pay a premium for NOR Flash, a fast memory technology that scales poorly at densities above 512Mbits.

Octal Flash IC products include:

• (256Mb, 512Mb, 1Gb, 2Gb) 1.8V MP Q3/20 –Q421 32/24nm process

Winbond offers QspiNAND products with the same SPI interface with a cost-effective QspiNAND at 1Gb and 2Gb densities. While NOR Flash is more cost-effective at lower densities, NAND Flash is more cost-effective at 512Mb and above.

Qspi NAND Flash IC products include:

• (512Mb, 1Gb, 2Gb, 4Gb) 1.8V, 3V 32/24nm process

Winbond’s Authentication SPI Flash provide the handshake between the controller and the memory to ensure enhanced security of the data transmitted between the two devices. These products in the W74M family come with standard HMAC-SHA-256 crypto accelerator and four separate Monotonic Flash Counters that are HMAC-signed by individual secret keys.

Authentication SPI Flash IC products include:

• NOR Flash-based (64Mb, 128Mb, 256Mb, 512Mb) 1.8, 3V 58nm process
• NAND Flash-based (1Gb, 2Gb) 1.8V, 3V 46/32nm process

EEPROM, which stands for Electrically Erasable Programmable Read-Only Memory, is a nonvolatile form of reprogrammable memory and experiences no data loss even when its power supply has been removed. This kind of memory is often used to store user data, product IDs and other information.

Holtek provides different capacities of true EEPROM:

• 3-wire: 1.8-5.5V (64X16 /128X8) 8DIP/SOP
• I2C: 1.8V-5.5V(256X8/8192X8) 8DIP/SO, SOT23-5